SCT3060AW7TL
Rohm Semiconductor
Rohm Semiconductor
SICFET N-CH 650V 38A TO263-7
$19.87
Available to order
Reference Price (USD)
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$19.87000
500+
$19.6713
1000+
$19.4726
1500+
$19.2739
2000+
$19.0752
2500+
$18.8765
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SCT3060AW7TL
$19.87
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 78mOhm @ 13A, 18V
- Vgs(th) (Max) @ Id: 5.6V @ 6.67mA
- Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 18 V
- Vgs (Max): +22V, -4V
- Input Capacitance (Ciss) (Max) @ Vds: 852 pF @ 500 V
- FET Feature: -
- Power Dissipation (Max): 159W
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263-7
- Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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