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SCT3022KLHRC11

Rohm Semiconductor
SCT3022KLHRC11 Preview
Rohm Semiconductor
SICFET N-CH 1200V 95A TO247N
$138.93
Available to order
Reference Price (USD)
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$110.22000
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$104.53400
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$101.68960
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$99.55620
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Rohm Semiconductor SCT3022KLHRC11 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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SCT3022KLHRC11

SCT3022KLHRC11

$138.93

Product details

The SCT3022KLHRC11 single MOSFET from Rohm Semiconductor represents the pinnacle of Discrete Semiconductor Products in the Transistors - FETs, MOSFETs - Single category. Engineered for precision and reliability, this component offers outstanding electrical characteristics that benefit a wide range of electronic applications. Its advanced semiconductor technology ensures minimal conduction losses and efficient heat dissipation, critical factors in power-sensitive designs. The SCT3022KLHRC11 features an optimized package design that enhances thermal performance while maintaining a compact footprint. Key benefits include improved switching efficiency, better load handling capacity, and enhanced protection against voltage spikes. These attributes make it indispensable for electric vehicle charging systems, uninterruptible power supplies, and industrial motor drives. In the consumer sector, it excels in high-efficiency adapters, laptop power systems, and advanced lighting solutions. The component's reliability also makes it suitable for critical infrastructure applications like data center power distribution and emergency backup systems. For design engineers seeking a MOSFET that combines performance with durability, the SCT3022KLHRC11 delivers on all fronts. Take the next step in your project development use our online inquiry form to request detailed specifications and purchasing information today.

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Rds On (Max) @ Id, Vgs: 28.6mOhm @ 36A, 18V
  • Vgs(th) (Max) @ Id: 5.6V @ 18.2mA
  • Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 18 V
  • Vgs (Max): +22V, -4V
  • Input Capacitance (Ciss) (Max) @ Vds: 2879 pF @ 800 V
  • FET Feature: -
  • Power Dissipation (Max): 427W
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247N
  • Package / Case: TO-247-3

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