SCT2H12NYTB
Rohm Semiconductor
Rohm Semiconductor
SICFET N-CH 1700V 4A TO268
$6.96
Available to order
Reference Price (USD)
400+
$3.68150
800+
$3.30340
1,200+
$2.78600
Exquisite packaging
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SCT2H12NYTB
$6.96
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1700 V
- Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.1A, 18V
- Vgs(th) (Max) @ Id: 4V @ 410µA
- Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 18 V
- Vgs (Max): +22V, -6V
- Input Capacitance (Ciss) (Max) @ Vds: 184 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 44W (Tc)
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-268
- Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
