RT1A060APTR
Rohm Semiconductor
Rohm Semiconductor
MOSFET P-CH 12V 6A 8TSST
$0.52
Available to order
Reference Price (USD)
3,000+
$0.14415
6,000+
$0.13485
15,000+
$0.13020
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RT1A060APTR
$0.52
Product details
General specs
- Product Status: Not For New Designs
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12 V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 19mOhm @ 6A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 4.5 V
- Vgs (Max): -8V
- Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 6 V
- FET Feature: -
- Power Dissipation (Max): 600mW (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-TSST
- Package / Case: 8-SMD, Flat Lead
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