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RS3E135BNGZETB

Rohm Semiconductor
RS3E135BNGZETB Preview
Rohm Semiconductor
MOSFET N-CHANNEL 30V 9.5A 8SOP
$1.13
Available to order
Reference Price (USD)
2,500+
$0.37660
Exquisite packaging
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RS3E135BNGZETB

RS3E135BNGZETB

$1.13

Product details

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 14.6mOhm @ 9.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 4.5 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 15 V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)

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