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RS1P600BETB1

Rohm Semiconductor
RS1P600BETB1 Preview
Rohm Semiconductor
MOSFET N-CH 100V 17.5A/60A 8HSOP
$2.94
Available to order
Reference Price (USD)
2,500+
$1.22584
Exquisite packaging
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Rohm Semiconductor RS1P600BETB1 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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RS1P600BETB1

RS1P600BETB1

$2.94

Product details

The RS1P600BETB1 from Rohm Semiconductor is a technologically advanced single MOSFET transistor belonging to the Discrete Semiconductor Products family (Transistors - FETs, MOSFETs - Single). This component sets new standards in power switching efficiency, offering designers a perfect balance between performance and reliability. Engineered with precision, the RS1P600BETB1 demonstrates outstanding characteristics including fast switching capability, low power dissipation, and excellent thermal stability. These features make it particularly suitable for high-frequency applications and power-sensitive designs. The MOSFET finds extensive use in electric vehicle components, industrial welding equipment, and advanced power supply units. It's equally effective in consumer electronics such as high-efficiency LED drivers, smart appliances, and portable electronic devices. For infrastructure applications, the RS1P600BETB1 proves invaluable in telecom power systems, base station equipment, and railway electronics. Its rugged design ensures consistent performance even in challenging operating conditions. Design engineers will appreciate the component's versatility and the design flexibility it offers across multiple voltage and current ranges. To learn more about how the RS1P600BETB1 can enhance your specific application, we invite you to submit an online inquiry. Our technical sales team stands ready to provide detailed product information and purchasing options tailored to your project needs.

General specs

  • Product Status: Not For New Designs
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 9.7mOhm @ 17.5A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 50 V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta), 35W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-HSOP
  • Package / Case: 8-PowerTDFN

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