RR1LAM6STR
Rohm Semiconductor
Rohm Semiconductor
DIODE GEN PURP 600V 1A PMDTM
$0.46
Available to order
Reference Price (USD)
3,000+
$0.06877
6,000+
$0.05980
15,000+
$0.05083
30,000+
$0.04784
75,000+
$0.04485
150,000+
$0.04186
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RR1LAM6STR
$0.46
Product details
Experience superior rectification performance with the RR1LAM6STR single diode from Rohm Semiconductor, engineered for excellence in power electronics. This component offers an optimal balance between forward voltage characteristics and reverse leakage current, ensuring efficient energy conversion. The diode's advanced construction provides excellent thermal stability and long-term reliability in continuous operation. Designers will appreciate its versatility in applications ranging from consumer appliances to industrial power systems. The RR1LAM6STR performs exceptionally well in UPS systems, electric vehicle power trains, and renewable energy converters. Its robust design withstands electrical transients and mechanical stress, making it ideal for transportation and infrastructure applications. Additional benefits include consistent batch-to-batch performance and compatibility with automated assembly processes. For engineers seeking a reliable rectification solution, the RR1LAM6STR delivers outstanding results. Contact us today to learn more about this high-performance diode and its applications.
General specs
- Product Status: Not For New Designs
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10 µA @ 600 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SOD-128
- Supplier Device Package: PMDTM
- Operating Temperature - Junction: 150°C (Max)
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