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RQ3E180BNTB1

Rohm Semiconductor
RQ3E180BNTB1 Preview
Rohm Semiconductor
NCH 30V 39A MIDDLE POWER MOSFET:
$0.68
Available to order
Reference Price (USD)
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$0.68221
500+
$0.6753879
1000+
$0.6685658
1500+
$0.6617437
2000+
$0.6549216
2500+
$0.6480995
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RQ3E180BNTB1

RQ3E180BNTB1

$0.68

Product details

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 39A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 3.9mOhm @ 18A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 15 V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta), 20W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-HSMT (3.2x3)
  • Package / Case: 8-PowerVDFN

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