RGW60TS65DGC11
Rohm Semiconductor
Rohm Semiconductor
650V 30A FIELD STOP TRENCH IGBT
$5.92
Available to order
Reference Price (USD)
1+
$4.77000
10+
$4.28400
25+
$4.05000
100+
$3.51000
450+
$3.33000
900+
$2.98800
1,350+
$2.52000
Exquisite packaging
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RGW60TS65DGC11
$5.92
Product details
Experience unparalleled power control with the RGW60TS65DGC11 single IGBT transistor by Rohm Semiconductor. This high-efficiency component is perfect for applications in industrial automation, renewable energy, and automotive systems. The RGW60TS65DGC11 boasts low energy loss and high switching frequency, making it a top choice for modern power electronics. Its robust design ensures long-term reliability even under high stress and temperature variations. Whether you're designing for high-power or compact systems, the RGW60TS65DGC11 offers the flexibility and performance you need. Submit your inquiry online to learn more about this advanced IGBT transistor.
General specs
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 60 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
- Power - Max: 178 W
- Switching Energy: 480µJ (on), 490µJ (off)
- Input Type: Standard
- Gate Charge: 84 nC
- Td (on/off) @ 25°C: 37ns/114ns
- Test Condition: 400V, 30A, 10Ohm, 15V
- Reverse Recovery Time (trr): 92 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247N
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