RGW50TS65GC11
Rohm Semiconductor
Rohm Semiconductor
650V 25A FIELD STOP TRENCH IGBT
$4.74
Available to order
Reference Price (USD)
1+
$4.74000
500+
$4.6926
1000+
$4.6452
1500+
$4.5978
2000+
$4.5504
2500+
$4.503
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RGW50TS65GC11
$4.74
Product details
The RGW50TS65GC11 from Rohm Semiconductor is a state-of-the-art single IGBT transistor designed for high-power switching applications. This discrete semiconductor product is ideal for use in solar inverters, motor drives, and power distribution systems, offering exceptional efficiency and durability. With its low conduction losses and high thermal conductivity, the RGW50TS65GC11 ensures reliable operation in extreme environments. Engineers will appreciate its fast switching speed and compatibility with various control circuits. Upgrade your power management solutions with the RGW50TS65GC11 and achieve superior performance. For more information and to place an order, contact us today.
General specs
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 50 A
- Current - Collector Pulsed (Icm): 100 A
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 25A
- Power - Max: 156 W
- Switching Energy: 390µJ (on), 430µJ (off)
- Input Type: Standard
- Gate Charge: 73 nC
- Td (on/off) @ 25°C: 35ns/102ns
- Test Condition: 400V, 25A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247N
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