RGW00TS65GC11
Rohm Semiconductor
Rohm Semiconductor
650V 50A FIELD STOP TRENCH IGBT
$6.07
Available to order
Reference Price (USD)
1+
$4.77000
10+
$4.28400
25+
$4.05000
100+
$3.51000
450+
$3.33000
900+
$2.98800
1,350+
$2.52000
Exquisite packaging
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RGW00TS65GC11
$6.07
Product details
Enhance your power control systems with the RGW00TS65GC11 single IGBT transistor from Rohm Semiconductor. This high-performance component is tailored for applications demanding efficient energy conversion and minimal heat generation. The RGW00TS65GC11 is widely used in wind turbine inverters, HVAC systems, and medical power supplies, thanks to its exceptional reliability and fast response times. Its advanced architecture ensures low conduction losses and high switching frequencies, making it a top choice for modern power electronics. Whether you're upgrading existing systems or designing new ones, the RGW00TS65GC11 offers the flexibility and performance you need. Submit your inquiry online to learn more about this versatile IGBT transistor.
General specs
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 96 A
- Current - Collector Pulsed (Icm): 200 A
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
- Power - Max: 254 W
- Switching Energy: 1.18mJ (on), 960µJ (off)
- Input Type: Standard
- Gate Charge: 141 nC
- Td (on/off) @ 25°C: 52ns/180ns
- Test Condition: 400V, 50A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247N
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