RGTVX6TS65DGC11
Rohm Semiconductor

Rohm Semiconductor
IGBT
$9.39
Available to order
Reference Price (USD)
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$9.39000
500+
$9.2961
1000+
$9.2022
1500+
$9.1083
2000+
$9.0144
2500+
$8.9205
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Product details
Enhance your power control systems with the RGTVX6TS65DGC11 single IGBT transistor from Rohm Semiconductor. This high-performance component is tailored for applications demanding efficient energy conversion and minimal heat generation. The RGTVX6TS65DGC11 is widely used in wind turbine inverters, HVAC systems, and medical power supplies, thanks to its exceptional reliability and fast response times. Its advanced architecture ensures low conduction losses and high switching frequencies, making it a top choice for modern power electronics. Whether you're upgrading existing systems or designing new ones, the RGTVX6TS65DGC11 offers the flexibility and performance you need. Submit your inquiry online to learn more about this versatile IGBT transistor.
General specs
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 144 A
- Current - Collector Pulsed (Icm): 320 A
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 80A
- Power - Max: 404 W
- Switching Energy: 2.65mJ (on), 1.8mJ (off)
- Input Type: Standard
- Gate Charge: 171 nC
- Td (on/off) @ 25°C: 45ns/201ns
- Test Condition: 400V, 80A, 10Ohm, 15V
- Reverse Recovery Time (trr): 109 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247N