RGT50NS65DGC9
Rohm Semiconductor
Rohm Semiconductor
IGBT
$3.96
Available to order
Reference Price (USD)
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$3.96000
500+
$3.9204
1000+
$3.8808
1500+
$3.8412
2000+
$3.8016
2500+
$3.762
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RGT50NS65DGC9
$3.96
Product details
Upgrade your power electronics with the RGT50NS65DGC9 single IGBT transistor from Rohm Semiconductor. This advanced component is engineered for high-efficiency switching in industrial motor drives, renewable energy systems, and medical equipment. The RGT50NS65DGC9 features low conduction losses and superior thermal performance, ensuring reliable operation in demanding conditions. Its fast switching speed and compatibility with various gate drivers make it a preferred choice for power designers. Whether you're working on high-power or precision applications, the RGT50NS65DGC9 delivers consistent performance. Contact us today for more details and pricing information.
General specs
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 48 A
- Current - Collector Pulsed (Icm): 75 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
- Power - Max: 194 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 49 nC
- Td (on/off) @ 25°C: 27ns/88ns
- Test Condition: 400V, 25A, 10Ohm, 15V
- Reverse Recovery Time (trr): 58 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
- Supplier Device Package: TO-262
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