RGT20TM65DGC9
Rohm Semiconductor
Rohm Semiconductor
650V 10A FIELD STOP TRENCH IGBT
$2.79
Available to order
Reference Price (USD)
1+
$2.79000
500+
$2.7621
1000+
$2.7342
1500+
$2.7063
2000+
$2.6784
2500+
$2.6505
Exquisite packaging
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RGT20TM65DGC9
$2.79
Product details
The RGT20TM65DGC9 from Rohm Semiconductor is a high-performance single IGBT transistor designed for efficient power management in industrial applications. This discrete semiconductor product offers robust switching capabilities and thermal stability, making it ideal for demanding environments. With its advanced design, the RGT20TM65DGC9 ensures minimal energy loss and enhanced reliability, catering to a wide range of power electronics needs. Whether you're designing motor drives, power supplies, or renewable energy systems, this IGBT transistor delivers consistent performance under varying load conditions. Its compact form factor and ease of integration further simplify your design process. Explore the versatility of the RGT20TM65DGC9 and elevate your power management solutions today. For pricing and availability, submit an inquiry online.
General specs
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 10 A
- Current - Collector Pulsed (Icm): 30 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 10A
- Power - Max: 25 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 22 nC
- Td (on/off) @ 25°C: 12ns/32ns
- Test Condition: 400V, 10A, 10Ohm, 15V
- Reverse Recovery Time (trr): 42 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220NFM
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