RGS80TSX2HRC11
Rohm Semiconductor
Rohm Semiconductor
1200V 40A FIELD STOP TRENCH IGBT
$11.61
Available to order
Reference Price (USD)
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$11.61000
500+
$11.4939
1000+
$11.3778
1500+
$11.2617
2000+
$11.1456
2500+
$11.0295
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RGS80TSX2HRC11
$11.61
Product details
Upgrade your power electronics with the RGS80TSX2HRC11 single IGBT transistor from Rohm Semiconductor. This advanced component is engineered for high-efficiency switching in industrial motor drives, renewable energy systems, and medical equipment. The RGS80TSX2HRC11 features low conduction losses and superior thermal performance, ensuring reliable operation in demanding conditions. Its fast switching speed and compatibility with various gate drivers make it a preferred choice for power designers. Whether you're working on high-power or precision applications, the RGS80TSX2HRC11 delivers consistent performance. Contact us today for more details and pricing information.
General specs
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
- Power - Max: 555 W
- Switching Energy: 3mJ (on), 3.1mJ (off)
- Input Type: Standard
- Gate Charge: 104 nC
- Td (on/off) @ 25°C: 49ns/199ns
- Test Condition: 600V, 40A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247N
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