R8011KNXC7G
Rohm Semiconductor
Rohm Semiconductor
HIGH-SPEED SWITCHING NCH 800V 11
$5.27
Available to order
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R8011KNXC7G
$5.27
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 450mOhm @ 5.5A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 5.5mA
- Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 65W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FM
- Package / Case: TO-220-3 Full Pack
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