R6535KNZ4C13
Rohm Semiconductor
Rohm Semiconductor
650V 35A TO-247, HIGH-SPEED SWIT
$7.86
Available to order
Reference Price (USD)
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$7.86000
500+
$7.7814
1000+
$7.7028
1500+
$7.6242
2000+
$7.5456
2500+
$7.467
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R6535KNZ4C13
$7.86
Product details
The R6535KNZ4C13 single MOSFET from Rohm Semiconductor represents the pinnacle of Discrete Semiconductor Products in the Transistors - FETs, MOSFETs - Single category. Engineered for precision and reliability, this component offers outstanding electrical characteristics that benefit a wide range of electronic applications. Its advanced semiconductor technology ensures minimal conduction losses and efficient heat dissipation, critical factors in power-sensitive designs. The R6535KNZ4C13 features an optimized package design that enhances thermal performance while maintaining a compact footprint. Key benefits include improved switching efficiency, better load handling capacity, and enhanced protection against voltage spikes. These attributes make it indispensable for electric vehicle charging systems, uninterruptible power supplies, and industrial motor drives. In the consumer sector, it excels in high-efficiency adapters, laptop power systems, and advanced lighting solutions. The component's reliability also makes it suitable for critical infrastructure applications like data center power distribution and emergency backup systems. For design engineers seeking a MOSFET that combines performance with durability, the R6535KNZ4C13 delivers on all fronts. Take the next step in your project development use our online inquiry form to request detailed specifications and purchasing information today.
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 115mOhm @ 18.1A, 10V
- Vgs(th) (Max) @ Id: 5V @ 1.21mA
- Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 379W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247G
- Package / Case: TO-247-3
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