R6524KNX3C16
Rohm Semiconductor
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Rohm Semiconductor
650V 24A, TO-220AB, HIGH-SPEED S
$4.77
Available to order
Reference Price (USD)
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$4.77000
500+
$4.7223
1000+
$4.6746
1500+
$4.6269
2000+
$4.5792
2500+
$4.5315
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Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 185mOhm @ 11.3A, 10V
- Vgs(th) (Max) @ Id: 5V @ 750µA
- Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 253W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3