R6504KND3TL1
Rohm Semiconductor
Rohm Semiconductor
HIGH-SPEED SWITCHING, NCH 650V 4
$1.63
Available to order
Reference Price (USD)
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$1.63000
500+
$1.6137
1000+
$1.5974
1500+
$1.5811
2000+
$1.5648
2500+
$1.5485
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R6504KND3TL1
$1.63
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1.5A, 10V
- Vgs(th) (Max) @ Id: 5V @ 130µA
- Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 58W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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