Shopping cart

Subtotal: $0.00

R6009ENJTL

Rohm Semiconductor
R6009ENJTL Preview
Rohm Semiconductor
MOSFET N-CH 600V 9A LPTS
$3.10
Available to order
Reference Price (USD)
1,000+
$1.20350
2,000+
$1.16200
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

Rohm Semiconductor R6009ENJTL is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
R6009ENJTL

R6009ENJTL

$3.10

Product details

Rohm Semiconductor's R6009ENJTL stands out in the Discrete Semiconductor Products market as a top-tier single MOSFET transistor in the Transistors - FETs, MOSFETs - Single segment. This component combines cutting-edge semiconductor technology with practical design features for superior electrical performance. The R6009ENJTL demonstrates exceptional characteristics including low gate charge, excellent switching behavior, and reliable overcurrent protection. These features translate to reduced power losses and extended device lifespan in your applications. The transistor's robust construction ensures stable operation in challenging environmental conditions, from temperature extremes to mechanical stress. Industrial engineers will appreciate its versatility in robotics control systems, welding equipment, and power tool applications. For consumer electronics, it's perfect for high-end audio systems, gaming consoles, and smart home devices. The R6009ENJTL also performs exceptionally in renewable energy applications such as solar inverters and wind turbine controls. With its balanced performance metrics, this MOSFET provides the ideal solution for your power management needs. Ready to incorporate this high-quality component into your designs? Submit your inquiry through our user-friendly online platform for quick response and competitive pricing options.

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 535mOhm @ 2.8A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LPTS
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Viewed products

Toshiba Semiconductor and Storage

XPN9R614MC,L1XHQ

$0.00 (not set)
Infineon Technologies

IPS60R600PFD7SAKMA1

$0.00 (not set)
Taiwan Semiconductor Corporation

TSM60NB380CP ROG

$0.00 (not set)
Rohm Semiconductor

US5U35TR

$0.00 (not set)
Infineon Technologies

IRFP4668PBF

$0.00 (not set)
onsemi

NTMFS5H630NLT1G

$0.00 (not set)
STMicroelectronics

STB19NM65N

$0.00 (not set)
onsemi

NVMFS6H852NT1G

$0.00 (not set)
Vishay Siliconix

SIRA01DP-T1-GE3

$0.00 (not set)
Nexperia USA Inc.

BST82,215

$0.00 (not set)
Top