R6007JND3TL1
Rohm Semiconductor
Rohm Semiconductor
MOSFET N-CH 600V 7A TO252
$2.01
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R6007JND3TL1
$2.01
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Rds On (Max) @ Id, Vgs: 780mOhm @ 3.5A, 15V
- Vgs(th) (Max) @ Id: 7V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 15 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 475 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 96W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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