R6004JNXC7G
Rohm Semiconductor
Rohm Semiconductor
MOSFET N-CH 600V 4A TO220FM
$2.56
Available to order
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R6004JNXC7G
$2.56
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Rds On (Max) @ Id, Vgs: 1.43Ohm @ 2A, 15V
- Vgs(th) (Max) @ Id: 7V @ 450µA
- Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 15 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 35W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FM
- Package / Case: TO-220-3 Full Pack
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