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IMT3AT108

Rohm Semiconductor
IMT3AT108 Preview
Rohm Semiconductor
TRANS 2PNP 50V 0.15A 6SMT
$0.41
Available to order
Reference Price (USD)
3,000+
$0.08200
6,000+
$0.07380
15,000+
$0.06560
30,000+
$0.06150
75,000+
$0.05740
Exquisite packaging
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IMT3AT108

IMT3AT108

$0.41

Product details

Introducing the IMT3AT108 BJT Array by Rohm Semiconductor, a premium offering in Discrete Semiconductor Products. This sophisticated transistor array combines multiple bipolar junction transistors with closely matched parameters. The IMT3AT108 excels in applications demanding coordinated switching or amplification across several channels. Its design emphasizes thermal stability and parameter uniformity throughout the array. The product delivers high current gain with minimal variation between individual transistors. With its compact footprint, it enables high-density circuit designs without performance compromise. The IMT3AT108 features low noise operation for sensitive signal processing applications. Its robust construction withstands mechanical stress and environmental factors. This BJT Array demonstrates excellent long-term parameter stability for reliable system operation. Power supply designers value its consistent performance in voltage regulation circuits. Audio engineers utilize it for balanced amplification stages in professional equipment. Automotive electronics benefit from its durability in challenging operating conditions. The IMT3AT108 also serves critical functions in industrial control systems. Rohm Semiconductor has implemented rigorous quality control measures throughout production. The component's design facilitates heat dissipation in high-power applications. Its lead-free composition meets modern environmental standards. For design engineers seeking reliable, high-performance transistor arrays, the IMT3AT108 delivers exceptional value. Explore its capabilities further by submitting an inquiry through our online portal today.

General specs

  • Product Status: Active
  • Transistor Type: 2 PNP (Dual)
  • Current - Collector (Ic) (Max): 150mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
  • Power - Max: 300mW
  • Frequency - Transition: 140MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-74, SOT-457
  • Supplier Device Package: SMT6

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