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IMH23T110

Rohm Semiconductor
IMH23T110 Preview
Rohm Semiconductor
TRANS PREBIAS DUAL NPN SMT6
$0.52
Available to order
Reference Price (USD)
3,000+
$0.11996
6,000+
$0.11269
15,000+
$0.10542
30,000+
$0.10178
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IMH23T110

IMH23T110

$0.52

Product details

The IMH23T110 by Rohm Semiconductor is a cutting-edge pre-biased bipolar junction transistor (BJT) array, part of the Discrete Semiconductor Products family under Transistors - Bipolar (BJT) - Arrays, Pre-Biased. This product is designed to meet the needs of modern electronics, offering high efficiency and reliability. The IMH23T110 features integrated pre-biasing, which streamlines circuit design and reduces component count. Its excellent thermal performance ensures consistent operation even in challenging environments. This BJT array is perfect for applications such as motor control, LED drivers, and power supplies. The IMH23T110 provides high gain and low saturation voltage, making it ideal for precision tasks. It is also widely used in renewable energy systems, robotics, and IoT devices. The compact and robust design of the IMH23T110 makes it suitable for both industrial and consumer applications. For engineers looking for a dependable and high-performance transistor array, the IMH23T110 is an excellent choice. Submit your inquiry now to get detailed information on pricing and delivery options tailored to your needs.

General specs

  • Product Status: Active
  • Transistor Type: 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Resistor - Base (R1): 4.7kOhms
  • Resistor - Emitter Base (R2): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 50mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 2.5mA, 50mA
  • Current - Collector Cutoff (Max): -
  • Frequency - Transition: 150MHz
  • Power - Max: 300mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-74, SOT-457
  • Supplier Device Package: SMT6

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