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IMB4AT110

Rohm Semiconductor
IMB4AT110 Preview
Rohm Semiconductor
TRANS PREBIAS DUAL PNP SMT6
$0.00
Available to order
Reference Price (USD)
3,000+
$0.09540
Exquisite packaging
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IMB4AT110

IMB4AT110

$0.00

Product details

The IMB4AT110 by Rohm Semiconductor is a cutting-edge pre-biased bipolar junction transistor (BJT) array, part of the Discrete Semiconductor Products family under Transistors - Bipolar (BJT) - Arrays, Pre-Biased. This product is designed to meet the needs of modern electronics, offering high efficiency and reliability. The IMB4AT110 features integrated pre-biasing, which streamlines circuit design and reduces component count. Its excellent thermal performance ensures consistent operation even in challenging environments. This BJT array is perfect for applications such as motor control, LED drivers, and power supplies. The IMB4AT110 provides high gain and low saturation voltage, making it ideal for precision tasks. It is also widely used in renewable energy systems, robotics, and IoT devices. The compact and robust design of the IMB4AT110 makes it suitable for both industrial and consumer applications. For engineers looking for a dependable and high-performance transistor array, the IMB4AT110 is an excellent choice. Submit your inquiry now to get detailed information on pricing and delivery options tailored to your needs.

General specs

  • Product Status: Active
  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 10kOhms
  • Resistor - Emitter Base (R2): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): -
  • Frequency - Transition: 250MHz
  • Power - Max: 300mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-74, SOT-457
  • Supplier Device Package: SMT6

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