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EMG6T2R

Rohm Semiconductor
EMG6T2R Preview
Rohm Semiconductor
TRANS 2NPN PREBIAS 0.15W EMT5
$0.08
Available to order
Reference Price (USD)
8,000+
$0.06462
16,000+
$0.05744
24,000+
$0.05385
56,000+
$0.05026
Exquisite packaging
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EMG6T2R

EMG6T2R

$0.08

Product details

The EMG6T2R by Rohm Semiconductor is a state-of-the-art pre-biased bipolar junction transistor (BJT) array, part of the Discrete Semiconductor Products line under Transistors - Bipolar (BJT) - Arrays, Pre-Biased. This product is crafted to meet the demands of advanced electronic applications, offering high efficiency and dependability. The EMG6T2R features integrated pre-biasing, which optimizes circuit design and reduces component count. Its superior thermal performance ensures reliable operation in varying conditions. This BJT array is perfect for applications like motor drives, LED lighting, and power management. The EMG6T2R is also widely used in renewable energy solutions, industrial controls, and communication devices. With its high gain and low saturation voltage, it is ideal for precision applications. The compact and rugged design of the EMG6T2R makes it suitable for both commercial and industrial use. Engineers seeking a high-performance transistor array will find the EMG6T2R to be an excellent solution. Submit your inquiry today to receive detailed information on pricing and availability tailored to your needs.

General specs

  • Product Status: Active
  • Transistor Type: 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 47kOhms
  • Resistor - Emitter Base (R2): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 500nA (ICBO)
  • Frequency - Transition: 250MHz
  • Power - Max: 150mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD (5 Leads), Flat Lead
  • Supplier Device Package: EMT5

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