DTD123TKT146
Rohm Semiconductor
Rohm Semiconductor
TRANS PREBIAS NPN 200MW SMT3
$0.55
Available to order
Reference Price (USD)
3,000+
$0.12705
6,000+
$0.11935
15,000+
$0.11165
30,000+
$0.10780
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DTD123TKT146
$0.55
Product details
Optimized for space-constrained designs, the DTD123TKT146 pre-biased BJT from Rohm Semiconductor integrates critical biasing elements into a single package. This surface-mount device exhibits minimal leakage currents and consistent hFE characteristics across production batches. Its primary use cases involve power management in wearable devices, interface circuits for industrial sensors, and driver stages in low-voltage displays. The transistor's lead-free construction complies with global environmental standards, while its matte tin plating enhances solderability. Designers appreciate its predictable behavior in temperature-varying conditions, making it suitable for outdoor electronics. Explore volume discounts submit your requirements via our online portal for customized offers.
General specs
- Product Status: Active
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 40 V
- Resistor - Base (R1): 2.2 kOhms
- Resistor - Emitter Base (R2): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
- Current - Collector Cutoff (Max): 500nA (ICBO)
- Frequency - Transition: 200 MHz
- Power - Max: 200 mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SMT3
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