DTD113ZUT106
Rohm Semiconductor
Rohm Semiconductor
TRANS PREBIAS NPN 200MW UMT3
$0.48
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$0.13795
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$0.12460
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DTD113ZUT106
$0.48
Product details
Rohm Semiconductor's DTD113ZUT106 sets the benchmark for pre-biased BJTs with its advanced epitaxial process, yielding superior current handling per footprint area. The device demonstrates exceptional beta linearity under varying collector currents, crucial for instrumentation amplifiers. Its applications span across electric vehicle charging stations, precision agricultural sensors, and industrial IoT gateways. The transistor's hermetically sealed variants address military-grade reliability requirements, while standard versions cater to commercial electronics. Features like solder-dip finish and tape-reel packaging accommodate high-volume manufacturing. Simplify your amplifier designs download the DTD113ZUT106 SPICE model after registering on our technical portal.
General specs
- Product Status: Active
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 1 kOhms
- Resistor - Emitter Base (R2): 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 50mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 200 MHz
- Power - Max: 200 mW
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: UMT3
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