DTC123JUBTL
Rohm Semiconductor
Rohm Semiconductor
TRANS PREBIAS NPN 200MW UMT3F
$0.21
Available to order
Reference Price (USD)
3,000+
$0.03315
6,000+
$0.02990
15,000+
$0.02600
30,000+
$0.02340
75,000+
$0.02080
150,000+
$0.01820
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
| DHL / Fedex / UPS | 2-5 days |
| TNT | 2-6 days |
| EMS | 3-7 days |
Rohm Semiconductor DTC123JUBTL is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
DTC123JUBTL
$0.21
Product details
Rohm Semiconductor's DTC123JUBTL redefines reliability in pre-biased bipolar transistors, featuring a monolithic design that combines transistor and bias resistors. The device demonstrates exceptional linearity for analog circuits while maintaining low harmonic distortion. Its ESD protection and moisture-resistant packaging ensure longevity in harsh environments. Primary applications encompass smart home controllers, HVAC system interfaces, and robotics motor drivers. The transistor's fast switching capability suits pulse-width modulation (PWM) designs, whereas its stable DC gain benefits sensor signal chains. For engineers seeking drop-in replacements for discrete solutions, the DTC123JUBTL offers immediate performance upgrades. Contact our sales team for application notes and sample requests.
General specs
- Product Status: Not For New Designs
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 2.2 kOhms
- Resistor - Emitter Base (R2): 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250 MHz
- Power - Max: 200 mW
- Mounting Type: Surface Mount
- Package / Case: SC-85
- Supplier Device Package: UMT3F
Viewed products
