DTC114TUAT106
Rohm Semiconductor
Rohm Semiconductor
TRANS PREBIAS NPN 200MW UMT3
$0.21
Available to order
Reference Price (USD)
3,000+
$0.03315
6,000+
$0.02990
15,000+
$0.02600
30,000+
$0.02340
75,000+
$0.02080
150,000+
$0.01820
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DTC114TUAT106
$0.21
Product details
Engineered for efficiency, the DTC114TUAT106 pre-biased BJT by Rohm Semiconductor delivers superior signal amplification in compact packages. Its built-in bias network eliminates external components, reducing board space and assembly costs. The transistor excels in load switching, LED driving, and audio pre-amplification scenarios. Notable characteristics involve thermal shutdown protection, wide operating temperature ranges, and compatibility with automated pick-and-place systems. Industries leveraging this solution include industrial automation (PLC signal conditioning), consumer electronics (battery management systems), and telecommunications (signal repeaters). Streamline your BOM with this versatile component request a quote now for lead time details.
General specs
- Product Status: Not For New Designs
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 10 kOhms
- Resistor - Emitter Base (R2): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 500nA (ICBO)
- Frequency - Transition: 250 MHz
- Power - Max: 200 mW
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: UMT3
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