Shopping cart

Subtotal: $0.00

DTB113ZKT146

Rohm Semiconductor
DTB113ZKT146 Preview
Rohm Semiconductor
TRANS PREBIAS PNP 200MW SMT3
$0.40
Available to order
Reference Price (USD)
3,000+
$0.09972
6,000+
$0.09418
15,000+
$0.08587
30,000+
$0.08033
75,000+
$0.07756
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

Rohm Semiconductor DTB113ZKT146 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
DTB113ZKT146

DTB113ZKT146

$0.40

Product details

The DTB113ZKT146 from Rohm Semiconductor revolutionizes compact circuit design with its pre-configured bipolar transistor solution. Integrating base-emitter resistors on-die, this BJT maintains stable biasing against supply voltage fluctuations. It shines in energy harvesting systems, wireless charging circuits, and HMI touch controllers. The device's low-profile DFN package enables thermal vias for improved heat dissipation in dense layouts. Characterized by ultra-low popcorn noise, it's ideal for sensitive measurement equipment. Automotive-qualified options are available for under-hood electronics. Reduce development cycles with this application-ready component use our live chat feature for immediate technical support on DTB113ZKT146 integration.

General specs

  • Product Status: Active
  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 500 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Resistor - Base (R1): 1 kOhms
  • Resistor - Emitter Base (R2): 10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 200 MHz
  • Power - Max: 200 mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SMT3

Viewed products

Diodes Incorporated

DDTA143ZUA-7-F

$0.00 (not set)
Diodes Incorporated

ADTA144WCAQ-13

$0.00 (not set)
Rohm Semiconductor

DTB123ECT116

$0.00 (not set)
Nexperia USA Inc.

PDTC115EUF

$0.00 (not set)
Diodes Incorporated

DDTC124XCA-7-F

$0.00 (not set)
onsemi

NSVMMUN2135LT1G

$0.00 (not set)
onsemi

MUN2216T1G

$0.00 (not set)
Infineon Technologies

BCR129WH6327

$0.00 (not set)
Toshiba Semiconductor and Storage

RN1412,LF

$0.00 (not set)
Fairchild Semiconductor

FJX3001RTF

$0.00 (not set)
Top