Shopping cart

Subtotal: $0.00

BSM300C12P3E301

Rohm Semiconductor
BSM300C12P3E301 Preview
Rohm Semiconductor
SICFET N-CH 1200V 300A MODULE
$1,028.57
Available to order
Reference Price (USD)
1+
$1028.57000
500+
$1018.2843
1000+
$1007.9986
1500+
$997.7129
2000+
$987.4272
2500+
$977.1415
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

Rohm Semiconductor BSM300C12P3E301 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
BSM300C12P3E301

BSM300C12P3E301

$1,028.57

Product details

Enhance your electronic designs with the BSM300C12P3E301 single MOSFET transistor from Rohm Semiconductor, a premium Discrete Semiconductor Product in the Transistors - FETs, MOSFETs - Single classification. This power-efficient component excels in switching applications, delivering robust performance with minimal energy loss. The BSM300C12P3E301 features an optimized gate drive characteristic that ensures smooth operation across various voltage ranges. Its compact design doesn't compromise on power handling capabilities, making it suitable for space-constrained applications. Notable advantages include superior noise immunity, stable operation under varying load conditions, and enhanced electrostatic discharge protection. These qualities make the BSM300C12P3E301 particularly valuable for medical equipment, telecommunications infrastructure, and aerospace electronics. Implement this MOSFET in your next project involving DC-DC converters, load switches, or power distribution systems. The component's reliability and efficiency will significantly improve your system's overall performance. For engineers seeking quality MOSFET solutions, the BSM300C12P3E301 represents an excellent choice. Visit our website to request a quote or submit your inquiry directly through our online portal for prompt assistance.

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: 5.6V @ 80mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Vgs (Max): +22V, -4V
  • Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 10 V
  • FET Feature: Standard
  • Power Dissipation (Max): 1360W (Tc)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: -
  • Supplier Device Package: Module
  • Package / Case: Module

Viewed products

Renesas Electronics America Inc

H5N2901LSTL-E

$0.00 (not set)
Microchip Technology

APTM50DAM19G

$0.00 (not set)
Vishay Siliconix

SIS184LDN-T1-GE3

$0.00 (not set)
Vishay Siliconix

SIR826DP-T1-RE3

$0.00 (not set)
onsemi

NTTFS6H860NTAG

$0.00 (not set)
Diodes Incorporated

DMN3061SW-13

$0.00 (not set)
Diodes Incorporated

DMT6009LPS-13

$0.00 (not set)
Renesas Electronics America Inc

2SJ243(0)-T1-A

$0.00 (not set)
Diodes Incorporated

DMG7401SFG-13

$0.00 (not set)
Diodes Incorporated

DMP6018LPS-13

$0.00 (not set)
Top