BSM300C12P3E301
Rohm Semiconductor
Rohm Semiconductor
SICFET N-CH 1200V 300A MODULE
$1,028.57
Available to order
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BSM300C12P3E301
$1,028.57
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: 5.6V @ 80mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): +22V, -4V
- Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 10 V
- FET Feature: Standard
- Power Dissipation (Max): 1360W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: -
- Supplier Device Package: Module
- Package / Case: Module
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