BSM180C12P2E202
Rohm Semiconductor
Rohm Semiconductor
SICFET N-CH 1200V 204A MODULE
$720.00
Available to order
Reference Price (USD)
1+
$560.00000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
| DHL / Fedex / UPS | 2-5 days |
| TNT | 2-6 days |
| EMS | 3-7 days |
Rohm Semiconductor BSM180C12P2E202 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
BSM180C12P2E202
$720.00
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 204A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: 4V @ 35.2mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): +22V, -6V
- Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 1360W (Tc)
- Operating Temperature: 175°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: Module
- Package / Case: Module
