BS2103F-E2
Rohm Semiconductor
Rohm Semiconductor
IC GATE DRVR HALF-BRIDGE 8SOP
$0.00
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Reference Price (USD)
2,500+
$0.42000
Exquisite packaging
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Rohm Semiconductor BS2103F-E2 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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BS2103F-E2
$0.00
Product details
Engineered for excellence, the BS2103F-E2 PMIC - Gate Driver from Rohm Semiconductor represents the next generation of power management technology. This sophisticated IC provides intelligent gate driving capabilities for MOSFETs and IGBTs, ensuring optimal switching performance in power conversion systems. The BS2103F-E2 features a compact design that doesn't compromise on functionality, offering designers a perfect balance between size and performance. Its innovative architecture minimizes switching losses while maintaining precise control over power devices. The gate driver incorporates advanced synchronization techniques that enhance system reliability under varying load conditions. With its industry-leading noise immunity, the BS2103F-E2 maintains stable operation even in electrically noisy environments. This makes it particularly valuable for electric vehicle charging stations, where consistent performance is critical. The component also finds ideal applications in solar power conditioning systems and uninterruptible power supplies (UPS). For industrial robotics, the BS2103F-E2 enables precise motor control with minimal energy waste. The gate driver's thermal management capabilities ensure long-term reliability in high-temperature operations. Additional benefits include configurable drive strength and programmable turn-on/off times, allowing for fine-tuned performance optimization. The BS2103F-E2 also features comprehensive fault detection and reporting functions for enhanced system safety. These attributes make it a preferred choice for medical imaging equipment and aerospace power systems. Discover how this gate driver can elevate your power management solution - visit our website to request a quote or technical support for your project needs.
General specs
- Product Status: Obsolete
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10V ~ 18V
- Logic Voltage - VIL, VIH: 1V, 2.6V
- Current - Peak Output (Source, Sink): 60mA, 130mA
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 600 V
- Rise / Fall Time (Typ): 200ns, 100ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.173", 4.40mm Width)
- Supplier Device Package: 8-SOP
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