BS2101F-E2
Rohm Semiconductor
Rohm Semiconductor
IC GATE DRV HI-SIDE/LO-SIDE 8SOP
$1.60
Available to order
Reference Price (USD)
2,500+
$0.33060
5,000+
$0.31920
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BS2101F-E2
$1.60
Product details
The BS2101F-E2 from Rohm Semiconductor is a premium PMIC - Gate Driver solution designed for high-efficiency power conversion systems. This advanced IC delivers precise control for power switches, enabling optimal performance in various applications. The BS2101F-E2 features a unique combination of high drive current capability and low power consumption, making it suitable for both high-power and energy-sensitive designs. Its intelligent thermal management system ensures reliable operation under varying load conditions. The gate driver's adaptive timing control minimizes switching losses while preventing cross-conduction. For electric vehicle powertrains, the BS2101F-E2 provides robust control for traction inverters and onboard chargers. It's equally effective in industrial UPS systems, where reliable power conversion is critical. The component also excels in high-power LED lighting drivers, enabling efficient dimming control. The BS2101F-E2 incorporates advanced diagnostic features that facilitate system monitoring and maintenance. Its configurable output stages accommodate different power device technologies and gate drive requirements. The gate driver's excellent noise immunity makes it suitable for operation in electrically noisy environments. These characteristics are particularly valuable for welding equipment and plasma cutting systems. The BS2101F-E2 also performs exceptionally in high-frequency resonant converters used in induction cooking applications. Its small form factor and high integration level simplify PCB layout while reducing overall system size. The device supports multiple control interfaces for flexible system integration. With its comprehensive protection features and reliable performance, the BS2101F-E2 is an excellent choice for demanding power electronics applications. Contact our sales team today to discuss your specific requirements and receive personalized product recommendations. Submit your inquiry through our website for prompt response and detailed technical information.
General specs
- Product Status: Not For New Designs
- Driven Configuration: High-Side or Low-Side
- Channel Type: Synchronous
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10V ~ 18V
- Logic Voltage - VIL, VIH: 1V, 2.6V
- Current - Peak Output (Source, Sink): 60mA, 130mA
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 600 V
- Rise / Fall Time (Typ): 60ns, 20ns
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.173", 4.40mm Width)
- Supplier Device Package: 8-SOP
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