BR24G04FVJ-3AGTE2
Rohm Semiconductor
Rohm Semiconductor
IC EEPROM 4K I2C 1MHZ 8TSSOP
$0.23
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$0.15981
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BR24G04FVJ-3AGTE2
$0.23
Product details
The BR24G04FVJ-3AGTE2 by Rohm Semiconductor represents the next generation of memory IC technology, offering unparalleled performance for data-intensive applications. This memory solution combines high density with rapid access capabilities, providing system designers with flexible options for various architectural requirements. Its advanced interface ensures compatibility with modern processors and controllers.
Notable features include enhanced security protocols to protect sensitive data, multi-level cell technology for efficient storage, and adaptive power management for energy-sensitive applications. The BR24G04FVJ-3AGTE2 demonstrates exceptional endurance characteristics, making it suitable for applications with frequent read/write cycles. Its architecture supports seamless scaling for future system upgrades.
This memory IC finds perfect application in AI accelerator cards, high-performance computing clusters, and data center storage arrays. It's equally effective in automotive ADAS systems, 5G network infrastructure, and industrial robotics requiring real-time data processing. The BR24G04FVJ-3AGTE2 also serves well in advanced medical imaging equipment and scientific instrumentation.
To explore how this Rohm Semiconductor memory IC can optimize your design, submit your inquiry through our digital platform. We offer comprehensive support from technical consultation to volume pricing for the BR24G04FVJ-3AGTE2 memory solution.
General specs
- Product Status: Active
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 4Kb (512 x 8)
- Memory Interface: I²C
- Clock Frequency: 1 MHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: -
- Voltage - Supply: 1.6V ~ 5.5V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
- Supplier Device Package: 8-TSSOP-BJ
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