2SCR502U3HZGT106
Rohm Semiconductor
Rohm Semiconductor
TRANS NPN 30V 0.5A UMT3
$0.37
Available to order
Reference Price (USD)
3,000+
$0.09216
6,000+
$0.08704
15,000+
$0.07936
30,000+
$0.07424
75,000+
$0.07168
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
| DHL / Fedex / UPS | 2-5 days |
| TNT | 2-6 days |
| EMS | 3-7 days |
Rohm Semiconductor 2SCR502U3HZGT106 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
2SCR502U3HZGT106
$0.37
Product details
The 2SCR502U3HZGT106 from Rohm Semiconductor is a high-performance Bipolar Junction Transistor (BJT) designed for reliable amplification and switching applications. As part of the Discrete Semiconductor Products category, this single BJT transistor delivers exceptional efficiency and durability. Its robust construction ensures stable operation under varying electrical conditions, making it a versatile choice for engineers and designers. Whether you're working on low-power circuits or high-frequency applications, the 2SCR502U3HZGT106 offers consistent performance with minimal distortion. The transistor's compact design allows for easy integration into various circuit layouts, saving valuable board space. With its excellent thermal stability and low noise characteristics, this BJT is ideal for precision electronic systems. Upgrade your projects with the 2SCR502U3HZGT106 and experience superior signal processing capabilities. For pricing and availability, submit an inquiry today to explore how this transistor can enhance your designs.
General specs
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 30 V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 200mA
- Current - Collector Cutoff (Max): 200nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
- Power - Max: 200 mW
- Frequency - Transition: 360MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: UMT3
Viewed products
