CYD18S36V-100BBI
Rochester Electronics, LLC
Rochester Electronics, LLC
DUAL-PORT SRAM, 512KX36, 5.2NS
$239.98
Available to order
Reference Price (USD)
1+
$239.98000
500+
$237.5802
1000+
$235.1804
1500+
$232.7806
2000+
$230.3808
2500+
$227.981
Exquisite packaging
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| EMS | 3-7 days |
Rochester Electronics, LLC CYD18S36V-100BBI is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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CYD18S36V-100BBI
$239.98
Product details
Enhance your system's performance with the CYD18S36V-100BBI memory IC from Rochester Electronics, LLC, a cutting-edge solution for modern data storage needs. This memory product delivers exceptional speed and reliability, engineered to meet the rigorous demands of today's electronic applications. Its innovative design ensures optimal performance in various operating conditions.
The CYD18S36V-100BBI boasts features such as extended endurance, wide operating voltage range, and excellent temperature stability. These characteristics make it particularly suitable for applications requiring consistent performance under challenging environmental conditions. The memory IC maintains data integrity even during power fluctuations, providing peace of mind for critical systems.
Ideal applications include aerospace avionics systems, military communication equipment, and industrial control units. The CYD18S36V-100BBI also excels in IoT devices requiring persistent memory and enterprise storage solutions demanding high capacity. Its versatility extends to renewable energy systems where reliable data storage is crucial for operation monitoring.
Contact us today through our online inquiry system to learn more about the CYD18S36V-100BBI and how it can benefit your specific application. Our experts are ready to assist with technical details and procurement options for this Rochester Electronics, LLC memory solution.
General specs
- Product Status: Active
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port
- Memory Size: 18Mb (512K x 36)
- Memory Interface: Parallel
- Clock Frequency: 100 MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.7V ~ 1.9V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 256-LBGA
- Supplier Device Package: 256-FBGA (23x23)
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