CYD02S36V-133BBI
Rochester Electronics, LLC
Rochester Electronics, LLC
DUAL-PORT SRAM, 64KX36
$75.60
Available to order
Reference Price (USD)
1+
$75.60000
500+
$74.844
1000+
$74.088
1500+
$73.332
2000+
$72.576
2500+
$71.82
Exquisite packaging
Discount
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| TNT | 2-6 days |
| EMS | 3-7 days |
Rochester Electronics, LLC CYD02S36V-133BBI is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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CYD02S36V-133BBI
$75.60
Product details
Rochester Electronics, LLC's CYD02S36V-133BBI memory IC sets new standards in non-volatile storage technology, delivering robust performance for mission-critical applications. This memory solution offers the perfect balance of speed, capacity, and reliability, engineered to meet the evolving needs of modern electronics. Its architecture ensures data persistence without constant power supply.
The CYD02S36V-133BBI features include advanced wear-leveling algorithms, error correction capabilities, and wide temperature operation range. These attributes make it particularly valuable for applications requiring long-term data retention and consistent performance. The memory IC supports various interface protocols, enabling easy integration into existing system designs.
Primary applications include automotive telematics systems, industrial programmable logic controllers, and smart grid infrastructure. The CYD02S36V-133BBI is also ideal for wearable health monitors, digital signage solutions, and edge computing devices. Its reliability makes it suitable for aerospace black box recorders and underground mining equipment.
Discover the full potential of this Rochester Electronics, LLC memory IC by submitting your inquiry through our online portal. Our sales team will provide detailed specifications and competitive pricing options for the CYD02S36V-133BBI to meet your project timeline and budget requirements.
General specs
- Product Status: Active
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Asynchronous, Standard
- Memory Size: 2Mb (64K x 36)
- Memory Interface: Parallel
- Clock Frequency: 133 MHz
- Write Cycle Time - Word, Page: -
- Access Time: 5 ns
- Voltage - Supply: 3.135V ~ 3.465V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 256-LBGA
- Supplier Device Package: 256-FBGA (17x17)
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