CY7C1383BV25-100AC
Rochester Electronics, LLC
Rochester Electronics, LLC
STANDARD SRAM, 1MX18, 8.5NS
$14.57
Available to order
Reference Price (USD)
1+
$14.57000
500+
$14.4243
1000+
$14.2786
1500+
$14.1329
2000+
$13.9872
2500+
$13.8415
Exquisite packaging
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| TNT | 2-6 days |
| EMS | 3-7 days |
Rochester Electronics, LLC CY7C1383BV25-100AC is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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CY7C1383BV25-100AC
$14.57
Product details
Rochester Electronics, LLC's CY7C1383BV25-100AC represents a breakthrough in memory IC technology, offering unprecedented performance for data storage applications. This advanced solution combines high-speed operation with exceptional reliability, meeting the stringent requirements of modern electronic systems. Its architecture is designed for seamless integration and future scalability.
Notable features include simultaneous read/write capability, power-loss data protection, and adaptive refresh technology. The CY7C1383BV25-100AC supports multiple operating modes to optimize performance for specific application requirements. Its robust design ensures data integrity even in electrically noisy environments, making it suitable for industrial applications.
The memory IC is ideal for use in financial transaction systems, emergency response equipment, and high-security access control. It also performs exceptionally well in video surveillance systems, e-mobility controllers, and agricultural automation devices. The CY7C1383BV25-100AC serves aerospace applications requiring radiation-tolerant memory and underwater exploration equipment needing pressure-resistant solutions.
Explore the capabilities of this Rochester Electronics, LLC memory IC by submitting your inquiry through our digital platform. We offer technical specifications, application notes, and customized procurement solutions for the CY7C1383BV25-100AC to support your project development cycle.
General specs
- Product Status: Active
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous, SDR
- Memory Size: 18Mb (1M x 18)
- Memory Interface: Parallel
- Clock Frequency: 100 MHz
- Write Cycle Time - Word, Page: -
- Access Time: 8.5 ns
- Voltage - Supply: 2.375V ~ 2.625V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-TQFP (14x20)
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