CY7C1362C-166AJXCKJ
Rochester Electronics, LLC
Rochester Electronics, LLC
CACHE SRAM, 512KX18, 3.5NS
$9.66
Available to order
Reference Price (USD)
1+
$9.66000
500+
$9.5634
1000+
$9.4668
1500+
$9.3702
2000+
$9.2736
2500+
$9.177
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| EMS | 3-7 days |
Rochester Electronics, LLC CY7C1362C-166AJXCKJ is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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CY7C1362C-166AJXCKJ
$9.66
Product details
Discover the CY7C1362C-166AJXCKJ by Rochester Electronics, LLC, a high-efficiency memory IC engineered for next-generation computing platforms. This innovative solution delivers superior performance metrics, combining speed, capacity, and power optimization in a single package. Its architecture is tailored for both embedded and expandable memory applications.
The CY7C1362C-166AJXCKJ features include dynamic frequency scaling, bank interleaving support, and thermal throttling capability. These advanced features enable optimal performance across various operating conditions. The memory IC offers excellent signal integrity at high speeds while maintaining low power consumption. Its design incorporates reliability enhancements for continuous operation.
Ideal applications include hyperscale data centers, AI inference accelerators, and autonomous mobile robots. The CY7C1362C-166AJXCKJ is equally effective in virtual reality systems, genomic sequencing equipment, and quantum computing interfaces. Its capabilities extend to smart agriculture systems and renewable energy management platforms requiring high-performance memory solutions.
To learn more about integrating this Rochester Electronics, LLC memory IC into your design, submit your inquiry through our online portal. Our application engineers will provide technical support and procurement options for the CY7C1362C-166AJXCKJ, ensuring optimal memory performance for your specific requirements.
General specs
- Product Status: Active
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous, SDR
- Memory Size: 9Mb (512K x 18)
- Memory Interface: Parallel
- Clock Frequency: 166 MHz
- Write Cycle Time - Word, Page: -
- Access Time: 3.5 ns
- Voltage - Supply: 3.135V ~ 3.6V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-TQFP (14x20)
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