CY7C1325B-100BGC
Rochester Electronics, LLC
Rochester Electronics, LLC
CACHE SRAM, 256KX18, 8NS
$8.66
Available to order
Reference Price (USD)
1+
$8.66000
500+
$8.5734
1000+
$8.4868
1500+
$8.4002
2000+
$8.3136
2500+
$8.227
Exquisite packaging
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| EMS | 3-7 days |
Rochester Electronics, LLC CY7C1325B-100BGC is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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CY7C1325B-100BGC
$8.66
Product details
The CY7C1325B-100BGC by Rochester Electronics, LLC represents the next generation of memory IC technology, offering unparalleled performance for data-intensive applications. This memory solution combines high density with rapid access capabilities, providing system designers with flexible options for various architectural requirements. Its advanced interface ensures compatibility with modern processors and controllers.
Notable features include enhanced security protocols to protect sensitive data, multi-level cell technology for efficient storage, and adaptive power management for energy-sensitive applications. The CY7C1325B-100BGC demonstrates exceptional endurance characteristics, making it suitable for applications with frequent read/write cycles. Its architecture supports seamless scaling for future system upgrades.
This memory IC finds perfect application in AI accelerator cards, high-performance computing clusters, and data center storage arrays. It's equally effective in automotive ADAS systems, 5G network infrastructure, and industrial robotics requiring real-time data processing. The CY7C1325B-100BGC also serves well in advanced medical imaging equipment and scientific instrumentation.
To explore how this Rochester Electronics, LLC memory IC can optimize your design, submit your inquiry through our digital platform. We offer comprehensive support from technical consultation to volume pricing for the CY7C1325B-100BGC memory solution.
General specs
- Product Status: Active
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous, SDR
- Memory Size: 4.5Mb (128K x 36)
- Memory Interface: Parallel
- Clock Frequency: 100 MHz
- Write Cycle Time - Word, Page: -
- Access Time: 8 ns
- Voltage - Supply: 3.15V ~ 3.6V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 119-BGA
- Supplier Device Package: 119-PBGA (14x22)
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