CY7C1325B-100AI
Rochester Electronics, LLC
Rochester Electronics, LLC
CACHE SRAM, 256KX18, 8NS
$5.11
Available to order
Reference Price (USD)
1+
$5.11000
500+
$5.0589
1000+
$5.0078
1500+
$4.9567
2000+
$4.9056
2500+
$4.8545
Exquisite packaging
Discount
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| DHL / Fedex / UPS | 2-5 days |
| TNT | 2-6 days |
| EMS | 3-7 days |
Rochester Electronics, LLC CY7C1325B-100AI is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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CY7C1325B-100AI
$5.11
Product details
The CY7C1325B-100AI from Rochester Electronics, LLC is a high-performance memory IC designed for demanding applications. This versatile memory solution offers reliable data storage and fast access times, making it ideal for a wide range of electronic systems. With its advanced architecture, the CY7C1325B-100AI ensures efficient operation in both industrial and commercial environments.
Key features include low power consumption, robust data retention, and seamless integration with various host systems. The memory IC supports multiple read/write operations without compromising performance, ensuring smooth operation in data-intensive scenarios. Its compact design allows for easy implementation in space-constrained applications while maintaining high reliability.
Applications span across industries, including automotive electronics for infotainment systems, industrial automation for data logging, and consumer electronics for smart devices. The CY7C1325B-100AI is also suitable for medical equipment requiring secure data storage and telecommunications infrastructure needing high-speed memory solutions.
For pricing and availability of this Rochester Electronics, LLC memory IC, please submit your inquiry through our online platform. Our team will provide you with competitive quotes and technical support to meet your project requirements.
General specs
- Product Status: Active
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous, SDR
- Memory Size: 4.5Mb (128K x 36)
- Memory Interface: Parallel
- Clock Frequency: 100 MHz
- Write Cycle Time - Word, Page: -
- Access Time: 8 ns
- Voltage - Supply: 3.15V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-TQFP (14x20)
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