CY7C1314BV18-200BZXC
Rochester Electronics, LLC
Rochester Electronics, LLC
IC SRAM 512KX36 QDRII 165-FBGA
$30.93
Available to order
Reference Price (USD)
1+
$30.93000
500+
$30.6207
1000+
$30.3114
1500+
$30.0021
2000+
$29.6928
2500+
$29.3835
Exquisite packaging
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Rochester Electronics, LLC CY7C1314BV18-200BZXC is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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CY7C1314BV18-200BZXC
$30.93
Product details
The CY7C1314BV18-200BZXC by Rochester Electronics, LLC represents the next generation of memory IC technology, offering unparalleled performance for data-intensive applications. This memory solution combines high density with rapid access capabilities, providing system designers with flexible options for various architectural requirements. Its advanced interface ensures compatibility with modern processors and controllers.
Notable features include enhanced security protocols to protect sensitive data, multi-level cell technology for efficient storage, and adaptive power management for energy-sensitive applications. The CY7C1314BV18-200BZXC demonstrates exceptional endurance characteristics, making it suitable for applications with frequent read/write cycles. Its architecture supports seamless scaling for future system upgrades.
This memory IC finds perfect application in AI accelerator cards, high-performance computing clusters, and data center storage arrays. It's equally effective in automotive ADAS systems, 5G network infrastructure, and industrial robotics requiring real-time data processing. The CY7C1314BV18-200BZXC also serves well in advanced medical imaging equipment and scientific instrumentation.
To explore how this Rochester Electronics, LLC memory IC can optimize your design, submit your inquiry through our digital platform. We offer comprehensive support from technical consultation to volume pricing for the CY7C1314BV18-200BZXC memory solution.
General specs
- Product Status: Active
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous, QDR II
- Memory Size: 18Mb (512K x 36)
- Memory Interface: Parallel
- Clock Frequency: 200 MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.7V ~ 1.9V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 165-LBGA
- Supplier Device Package: 165-FBGA (13x15)
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