CY62147DV30L-55ZSXI
Rochester Electronics, LLC
Rochester Electronics, LLC
STANDARD SRAM, 256KX16, 55NS
$2.51
Available to order
Reference Price (USD)
1+
$2.51000
500+
$2.4849
1000+
$2.4598
1500+
$2.4347
2000+
$2.4096
2500+
$2.3845
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Rochester Electronics, LLC CY62147DV30L-55ZSXI is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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CY62147DV30L-55ZSXI
$2.51
Product details
Discover the CY62147DV30L-55ZSXI by Rochester Electronics, LLC, a high-efficiency memory IC engineered for next-generation computing platforms. This innovative solution delivers superior performance metrics, combining speed, capacity, and power optimization in a single package. Its architecture is tailored for both embedded and expandable memory applications.
The CY62147DV30L-55ZSXI features include dynamic frequency scaling, bank interleaving support, and thermal throttling capability. These advanced features enable optimal performance across various operating conditions. The memory IC offers excellent signal integrity at high speeds while maintaining low power consumption. Its design incorporates reliability enhancements for continuous operation.
Ideal applications include hyperscale data centers, AI inference accelerators, and autonomous mobile robots. The CY62147DV30L-55ZSXI is equally effective in virtual reality systems, genomic sequencing equipment, and quantum computing interfaces. Its capabilities extend to smart agriculture systems and renewable energy management platforms requiring high-performance memory solutions.
To learn more about integrating this Rochester Electronics, LLC memory IC into your design, submit your inquiry through our online portal. Our application engineers will provide technical support and procurement options for the CY62147DV30L-55ZSXI, ensuring optimal memory performance for your specific requirements.
General specs
- Product Status: Active
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 4Mb (256K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 55ns
- Access Time: 55 ns
- Voltage - Supply: 2.2V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 44-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 44-TSOP II
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