UPD44324182BF5-E40-FQ1
Renesas Electronics America Inc
Renesas Electronics America Inc
DDR SRAM, 2MX18, 0.45NS
$57.03
Available to order
Reference Price (USD)
1+
$57.03000
500+
$56.4597
1000+
$55.8894
1500+
$55.3191
2000+
$54.7488
2500+
$54.1785
Exquisite packaging
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UPD44324182BF5-E40-FQ1
$57.03
Product details
The UPD44324182BF5-E40-FQ1 by Renesas Electronics America Inc represents the next generation of memory IC technology, offering unparalleled performance for data-intensive applications. This memory solution combines high density with rapid access capabilities, providing system designers with flexible options for various architectural requirements. Its advanced interface ensures compatibility with modern processors and controllers.
Notable features include enhanced security protocols to protect sensitive data, multi-level cell technology for efficient storage, and adaptive power management for energy-sensitive applications. The UPD44324182BF5-E40-FQ1 demonstrates exceptional endurance characteristics, making it suitable for applications with frequent read/write cycles. Its architecture supports seamless scaling for future system upgrades.
This memory IC finds perfect application in AI accelerator cards, high-performance computing clusters, and data center storage arrays. It's equally effective in automotive ADAS systems, 5G network infrastructure, and industrial robotics requiring real-time data processing. The UPD44324182BF5-E40-FQ1 also serves well in advanced medical imaging equipment and scientific instrumentation.
To explore how this Renesas Electronics America Inc memory IC can optimize your design, submit your inquiry through our digital platform. We offer comprehensive support from technical consultation to volume pricing for the UPD44324182BF5-E40-FQ1 memory solution.
General specs
- Product Status: Active
- Memory Type: -
- Memory Format: -
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- Memory Size: -
- Memory Interface: -
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- Write Cycle Time - Word, Page: -
- Access Time: -
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- Mounting Type: -
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