Shopping cart

Subtotal: $0.00

UPA2826T1S-E2-AT

Renesas Electronics America Inc
UPA2826T1S-E2-AT Preview
Renesas Electronics America Inc
8P HWSON
$1.74
Available to order
Reference Price (USD)
1+
$1.74000
500+
$1.7226
1000+
$1.7052
1500+
$1.6878
2000+
$1.6704
2500+
$1.653
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

Renesas Electronics America Inc UPA2826T1S-E2-AT is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
UPA2826T1S-E2-AT

UPA2826T1S-E2-AT

$1.74

Product details

Renesas Electronics America Inc's UPA2826T1S-E2-AT stands out in the Discrete Semiconductor Products market as a top-tier single MOSFET transistor in the Transistors - FETs, MOSFETs - Single segment. This component combines cutting-edge semiconductor technology with practical design features for superior electrical performance. The UPA2826T1S-E2-AT demonstrates exceptional characteristics including low gate charge, excellent switching behavior, and reliable overcurrent protection. These features translate to reduced power losses and extended device lifespan in your applications. The transistor's robust construction ensures stable operation in challenging environmental conditions, from temperature extremes to mechanical stress. Industrial engineers will appreciate its versatility in robotics control systems, welding equipment, and power tool applications. For consumer electronics, it's perfect for high-end audio systems, gaming consoles, and smart home devices. The UPA2826T1S-E2-AT also performs exceptionally in renewable energy applications such as solar inverters and wind turbine controls. With its balanced performance metrics, this MOSFET provides the ideal solution for your power management needs. Ready to incorporate this high-quality component into your designs? Submit your inquiry through our user-friendly online platform for quick response and competitive pricing options.

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 27A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V
  • Rds On (Max) @ Id, Vgs: 4.3mOhm @ 13.5A, 8V
  • Vgs(th) (Max) @ Id: 1.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 4 V
  • Vgs (Max): ±12V
  • Input Capacitance (Ciss) (Max) @ Vds: 3610 pF @ 10 V
  • FET Feature: -
  • Power Dissipation (Max): 20W (Ta)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-HWSON (3.3x3.3)
  • Package / Case: 8-PowerWDFN

Viewed products

Renesas Electronics America Inc

2SJ598-ZK-E1-AZ

$0.00 (not set)
Nexperia USA Inc.

BUK763R4-30,118

$0.00 (not set)
Renesas Electronics America Inc

NE5550779A-T1A-A

$0.00 (not set)
onsemi

NTTFS5D1N06HLTAG

$0.00 (not set)
onsemi

FCPF20N60T

$0.00 (not set)
Micro Commercial Co

MCAC38N10Y-TP

$0.00 (not set)
Diodes Incorporated

DMT32M4LFG-13

$0.00 (not set)
Harris Corporation

RFP8N20

$0.00 (not set)
Infineon Technologies

IPL65R130CFD7AUMA1

$0.00 (not set)
Goford Semiconductor

G2312

$0.00 (not set)
Top