RJP6085DPK-00#T0
Renesas Electronics America Inc

Renesas Electronics America Inc
IGBT 600V 40A 178.5W TO-3P
$4.16
Available to order
Reference Price (USD)
1+
$4.33000
10+
$3.86300
25+
$3.47680
Exquisite packaging
Discount
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Product details
The RJP6085DPK-00#T0 from Renesas Electronics America Inc is a high-performance single IGBT transistor designed for efficient power switching. This discrete semiconductor product is widely used in UPS systems, induction heating, and electric vehicle applications. With its low saturation voltage and excellent thermal management, the RJP6085DPK-00#T0 ensures minimal energy loss and maximum reliability. Its compact design and easy integration make it a versatile choice for various power electronics projects. Engineers will find its high current handling and fast switching capabilities invaluable. Discover the potential of the RJP6085DPK-00#T0 for your applications request a quote today.
General specs
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 40 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 40A
- Power - Max: 178.5 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-3P