RJP30H2DPK-M2#T0
Renesas Electronics America Inc
Renesas Electronics America Inc
IGBT
$5.12
Available to order
Reference Price (USD)
1+
$5.12000
500+
$5.0688
1000+
$5.0176
1500+
$4.9664
2000+
$4.9152
2500+
$4.864
Exquisite packaging
Discount
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| EMS | 3-7 days |
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RJP30H2DPK-M2#T0
$5.12
Product details
Maximize power efficiency with the RJP30H2DPK-M2#T0 single IGBT transistor by Renesas Electronics America Inc. This high-quality component is engineered for applications requiring robust switching and thermal stability, such as renewable energy systems, industrial welding machines, and electric vehicle powertrains. The RJP30H2DPK-M2#T0 features low switching losses and high current capacity, ensuring reliable performance in demanding conditions. Its compact design and ease of integration make it a favorite among power electronics designers. Whether you're working on large-scale industrial projects or compact consumer electronics, the RJP30H2DPK-M2#T0 delivers the performance you need. Get started today by submitting an online inquiry for pricing and availability.
General specs
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: -
- Power - Max: -
- Switching Energy: -
- Input Type: -
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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