RJK1001DPN-E0#T2
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET N-CH 100V 80A TO220AB
$3.55
Available to order
Reference Price (USD)
1+
$3.55000
500+
$3.5145
1000+
$3.479
1500+
$3.4435
2000+
$3.408
2500+
$3.3725
Exquisite packaging
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RJK1001DPN-E0#T2
$3.55
Product details
General specs
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 5.5mOhm @ 40A, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 147 nC @ 10 V
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: 10 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 200W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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